esd protected general features v ds = -20v,i d =-4a r ds(on) < 60m ? @ v gs =-2.5v r ds(on) < 45m ? @ v gs =-4.5v esd rating: 2500v hbm high power and current handing capability lead free product is acquired surface mount package application pwm application load switch schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity MSP3415E sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 10 v drain current-continuous i d -4 a drain current-pulsed (note 1) i dm -30 a maximum power dissipation p d 1.4 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 89.3 /w -20v(d-s) p-channel enhancement mode power mos fet MSP3415E lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
zero gate voltage drain current i dss v ds =-20v,v gs =0v - - 1 a gate-body leakage current i gss v gs =10v,v ds =0v - - 10 a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.35 -0.55 -0.9 v v gs =-4.5v, i d =-4a - 34 45 m ? drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-4a - 44 60 m ? forward transconductance g fs v ds =-5v,i d =-4a 8 - - s dynamic characteristics (note4) input capacitance c lss - 950 - pf output capacitance c oss - 165 - pf reverse transfer capacitance c rss v ds =-10v,v gs =0v, f=1.0mhz - 120 - pf switching characteristics (note 4) turn-on delay time t d(on) - 12 ns turn-on rise time t r - 10 ns turn-off delay time t d(off) - 19 ns turn-off fall time t f v dd =-10v,r l =2. 5 ? v gs =-4.5v,r gen =3 ? - 25 ns total gate charge q g - 12 nc gate-source charge q gs - 1.4 - nc gate-drain charge q gd v ds =-10v,i d =-4a, v gs =-4.5v - 3.6 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-4a - - -1.2 v diode forward current (note 2) i s - - -4 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -20 - v more semiconductor company limited http://www.moresemi.com 2/6 MSP3415E
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vds drain-source voltage (v) figure 4 safe operation area i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSP3415E
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) rdson (m ) more semiconductor company limited http://www.moresemi.com 4/6 MSP3415E
square wave pluse duration(sec) figure 13 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 5/6 MSP3415E
sot-23 package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 more semiconductor company limited http://www.moresemi.com 6/6 MSP3415E
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